Electronic conductivity of hydrogenated nanocrystalline silicon films

Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films C.Voz

In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...

Experimental investigations into the formation of nanoparticles in a/nc-Si:H thin films

Hydrogenated amorphous silicon thin films with nanocrystalline silicon inclusions sa /nc-Si:Hd have received considerable attention due to reports of electronic properties comparable to hydrogenated amorphous silicon sa-Si:Hd coupled with an improved resistance to the light-induced formation of defects. In this study, a /nc-Si:H thin films are synthesized via radio-frequency plasma-enhanced che...

Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition

Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the range of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, ...

Numerical Modeling of Non-equilibrium Plasma Discharge of Hydrogenated Silicon Nitride (SiH4/NH3/H2)

In this work, we model a radiofrequency discharge of hydrogenated silicon nitride in a capacitive coupled plasma reactor using Maxwellian and non-Maxwellian electron energy distribution function. The purpose is to investigate whether there is a real advantage and a significant contribution using non-Maxwellian electron energy distribution function rather than Maxwellian one for determining the ...